MJD47G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Published :

2006

Current - Collector Cutoff (Max) :

200μA

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

5V

Height :

2.38mm

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Voltage - Rated DC :

250V

hFE Min :

30

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Operating Temperature :

-65°C~150°C TJ

Frequency :

10MHz

Lead Free :

Lead Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Weight :

4.535924g

Pin Count :

3

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

250V

Number of Elements :

1

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Length :

6.73mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Max Collector Current :

1A

Max Power Dissipation :

1.56W

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Current Rating :

1A

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

250V

Gain Bandwidth Product :

10MHz

Power Dissipation :

1.56W

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Packaging :

Tube

Width :

6.22mm

Collector Base Voltage (VCBO) :

350V

Transition Frequency :

10MHz

Base Part Number :

MJD47

Number of Pins :

3

Factory Lead Time :

8 Weeks

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

1V