MJD47
- Mfr.Part #
- MJD47
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A DPAK
- Stock
- 5,650
- In Stock :
- 5,650
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 200μA
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Max Collector Current :
- 1A
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -65°C~150°C TJ
- Frequency :
- 10MHz
- Current Rating :
- 1A
- hFE Min :
- 30
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1.56W
- Published :
- 2006
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Base Part Number :
- MJD47
- Weight :
- 4.535924g
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 250V
- Width :
- 6.22mm
- Number of Terminations :
- 2
- Collector Emitter Voltage (VCEO) :
- 250V
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.73mm
- Height :
- 2.38mm
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 250V
- Collector Base Voltage (VCBO) :
- 350V
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Transition Frequency :
- 10MHz
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 8 Weeks
- Gain Bandwidth Product :
- 10MHz
- Max Power Dissipation :
- 1.56W
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MJD47

NPN -65°C~150°C TJ 200μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD47G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 300mA 10V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 10MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
MJD47G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD47G Applications
There are a lot of ON Semiconductor
MJD47G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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