MJD45H11T4
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- Mfr.Part #
- MJD45H11T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 80V 8A DPAK
- Stock
- 41
- In Stock ：
- 41
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 6.6mm
- Max Collector Current :
- 8A
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Base Part Number :
- MJD45
- Number of Pins :
- 3
- hFE Min :
- 60
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 40MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -80V
- Element Configuration :
- Single
- Current Rating :
- -8A
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- VCEsat-Max :
- 1 V
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 6.2mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector Cutoff (Max) :
- 10μA
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 80V
- Max Breakdown Voltage :
- 80V
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 20W
- Collector Emitter Voltage (VCEO) :
- 80V
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Number of Terminations :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Breakdown Voltage :
- -80V
- Max Power Dissipation :
- 20W
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 1V
- Radiation Hardening :
- No
- Height :
- 2.4mm
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Datasheets
- MJD45H11T4
MJD45H11T4 Documents
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PNP 150°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD45H11T4 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 4A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 400mA, 8A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 40MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
MJD45H11T4 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 40MHz
MJD45H11T4 Applications
There are a lot of STMicroelectronics
MJD45H11T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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