MJD45H11RLG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Gain Bandwidth Product :

90MHz

Current Rating :

-8A

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Height :

2.38mm

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Max Power Dissipation :

20W

Halogen Free :

Halogen Free

Width :

6.22mm

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

80V

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

PNP

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

5V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A 1V

Power Dissipation :

1.75W

Case Connection :

COLLECTOR

Base Part Number :

MJD45H11

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Voltage - Rated DC :

-80V

Collector Emitter Voltage (VCEO) :

80V

Collector Emitter Saturation Voltage :

1V

Contact Plating :

Tin

Published :

2005

Number of Elements :

1

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Length :

6.73mm

Transition Frequency :

90MHz

Number of Pins :

3

Max Breakdown Voltage :

80V

Mounting Type :

Surface Mount

Transistor Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

1μA

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

60

Max Collector Current :

8A

Frequency :

90MHz