MJD45H11G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Width :

6.22mm

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

REACH SVHC :

No SVHC

Number of Elements :

1

Number of Pins :

3

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

80V

Transition Frequency :

90MHz

Pbfree Code :

yes

Packaging :

Tube

Surface Mount :

yes

Transistor Type :

PNP

JESD-30 Code :

R-PSSO-G2

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A 1V

Operating Temperature :

-55°C~150°C TJ

Length :

6.73mm

Halogen Free :

Halogen Free

Radiation Hardening :

No

Current Rating :

-8A

Height :

2.38mm

Collector Emitter Saturation Voltage :

1V

Current - Collector Cutoff (Max) :

1μA

Voltage - Rated DC :

-80V

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1.75W

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

hFE Min :

60

JESD-609 Code :

e3

Frequency :

90MHz

Published :

2002

Number of Terminations :

2

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

5V

Mounting Type :

Surface Mount

Max Collector Current :

8A

Pin Count :

3

Gain Bandwidth Product :

90MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Power Dissipation :

1.75W

Base Part Number :

MJD45H11

Factory Lead Time :

22 Weeks

Collector Emitter Breakdown Voltage :

80V