MJD45H11-1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Halogen Free :

Halogen Free

Emitter Base Voltage (VEBO) :

5V

Time@Peak Reflow Temperature-Max (s) :

40

Width :

2.38mm

Contact Plating :

Tin

JESD-609 Code :

e3

Radiation Hardening :

No

Surface Mount :

No

JESD-30 Code :

R-PSIP-T3

Voltage - Rated DC :

-80V

Packaging :

Tube

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

80V

Published :

2003

Case Connection :

COLLECTOR

Lead Free :

Lead Free

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Collector Emitter Saturation Voltage :

1V

Current Rating :

-8A

Base Part Number :

MJD45H11

Gain Bandwidth Product :

90MHz

Length :

6.73mm

Max Collector Current :

8A

Height :

6.22mm

Number of Elements :

1

Polarity/Channel Type :

PNP

Transistor Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

Frequency :

90MHz

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Pin Count :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A 1V

hFE Min :

60

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

40MHz

Transistor Application :

SWITCHING

Number of Pins :

4

ECCN Code :

EAR99

Number of Terminations :

3

Element Configuration :

Single

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.75W

Collector Base Voltage (VCBO) :

5V

Current - Collector Cutoff (Max) :

1μA

Max Power Dissipation :

1.75W

Collector Emitter Voltage (VCEO) :

80V

Peak Reflow Temperature (Cel) :

260