MJD44H11TF
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- Mfr.Part #
- MJD44H11TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 80V 8A DPAK
- Stock
- 16,817
- In Stock ：
- 16,817
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Width :
- 6.1mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- Power Dissipation :
- 1.75W
- Height :
- 2.3mm
- Number of Pins :
- 3
- Base Part Number :
- MJD44H11
- Max Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Weight :
- 260.37mg
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 80V
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10μA
- hFE Min :
- 60
- Number of Terminations :
- 2
- Max Power Dissipation :
- 1.75W
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 80V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Length :
- 6.6mm
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 50MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Current Rating :
- 8A
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e3
- Frequency :
- 50MHz
- Published :
- 2009
- Collector Emitter Saturation Voltage :
- 1V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Gain Bandwidth Product :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 8A
- Datasheets
- MJD44H11TF
MJD44H11TF Documents
NPN 150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD44H11TF Overview
In this device, the DC current gain is 40 @ 4A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
MJD44H11TF Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz
MJD44H11TF Applications
There are a lot of ON Semiconductor
MJD44H11TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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