MJD44H11T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

85MHz

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

80V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A 1V

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

Case Connection :

COLLECTOR

Factory Lead Time :

8 Weeks

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

1V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Collector Emitter Voltage (VCEO) :

80V

Number of Elements :

1

Halogen Free :

Halogen Free

Current - Collector Cutoff (Max) :

1μA

Transistor Type :

NPN

Frequency :

85MHz

Power Dissipation :

1.75W

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Published :

2006

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

5V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Current Rating :

8A

Transition Frequency :

85MHz

Surface Mount :

yes

Base Part Number :

MJD44H11

hFE Min :

60

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Max Collector Current :

8A

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

1.75W

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Transistor Application :

SWITCHING

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

ECCN Code :

EAR99

Voltage - Rated DC :

80V