MJD44E3T4
- Mfr.Part #
- MJD44E3T4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PWR DARL NPN 10A 80V DPAK
- Stock
- 14,243
- In Stock :
- 14,243
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Surface Mount :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Saturation Voltage :
- 1.5V
- Collector Emitter Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- hFE Min :
- 1000
- Current - Collector Cutoff (Max) :
- 10μA
- Length :
- 6.73mm
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 80V
- Transistor Type :
- NPN - Darlington
- Number of Pins :
- 3
- Element Configuration :
- Single
- Voltage - Rated DC :
- 80V
- Polarity :
- NPN
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 10A
- Current Rating :
- 10A
- Width :
- 6.22mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Weight :
- 4.535924g
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Collector Current :
- 10A
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Height :
- 2.38mm
- Max Power Dissipation :
- 1.75W
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 2
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- MJD44
- Case Connection :
- COLLECTOR
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 5V
- Factory Lead Time :
- 5 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- Emitter Base Voltage (VEBO) :
- 7V
- Halogen Free :
- Halogen Free
- Transistor Element Material :
- SILICON
- Datasheets
- MJD44E3T4
MJD44E3T4 Documents

NPN - Darlington -55°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD44E3T4G Overview
DC current gain in this device equals 1000 @ 5A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 20mA, 10A.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 10A current rating.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 10A volts.
MJD44E3T4G Features
the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 2V @ 20mA, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 10A
MJD44E3T4G Applications
There are a lot of ON Semiconductor
MJD44E3T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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