KST55MTF
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- Mfr.Part #
- KST55MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SOT23-3
- Stock
- 3,428
- In Stock ：
- 3,428
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Rated DC :
- -60V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Weight :
- 30mg
- Collector Base Voltage (VCBO) :
- -60V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Current Rating :
- -500mA
- Published :
- 2008
- hFE Min :
- 50
- Qualification Status :
- Not Qualified
- Frequency :
- 50MHz
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 350mW
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 50MHz
- Gain Bandwidth Product :
- 50MHz
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Factory Lead Time :
- 6 Weeks
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- -4V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Collector Emitter Saturation Voltage :
- -250mV
- Transistor Type :
- PNP
- Max Operating Temperature :
- 150°C
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Max Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Power Dissipation :
- 350mW
- Number of Elements :
- 1
- Element Configuration :
- Single
- Base Part Number :
- KST55
- JESD-609 Code :
- e3
- Datasheets
- KST55MTF
PNP 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST55MTF Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at -4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
KST55MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KST55MTF Applications
There are a lot of ON Semiconductor
KST55MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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