KST55MTF
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- Mfr.Part #
- KST55MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SOT23-3
- Stock
- 3,428
- In Stock ：
- 3,428
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Transition Frequency :
- 50MHz
- Number of Terminations :
- 3
- hFE Min :
- 50
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 350mW
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- -60V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Published :
- 2008
- Emitter Base Voltage (VEBO) :
- -4V
- Gain Bandwidth Product :
- 50MHz
- Max Operating Temperature :
- 150°C
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Weight :
- 30mg
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Collector Current :
- 500mA
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Factory Lead Time :
- 6 Weeks
- Lead Free :
- Lead Free
- Power Dissipation :
- 350mW
- Base Part Number :
- KST55
- Terminal Form :
- Gull wing
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- -500mA
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Collector Emitter Saturation Voltage :
- -250mV
- Frequency :
- 50MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Datasheets
- KST55MTF
PNP 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST55MTF Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at -4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
KST55MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KST55MTF Applications
There are a lot of ON Semiconductor
KST55MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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