KST55MTF
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- Mfr.Part #
- KST55MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SOT23-3
- Stock
- 3,428
- In Stock ：
- 3,428
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- -250mV
- Factory Lead Time :
- 6 Weeks
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 50MHz
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Max Collector Current :
- 500mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Emitter Base Voltage (VEBO) :
- -4V
- Collector Base Voltage (VCBO) :
- -60V
- Weight :
- 30mg
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- -500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Rated DC :
- -60V
- Base Part Number :
- KST55
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 350mW
- Max Power Dissipation :
- 350mW
- Transition Frequency :
- 50MHz
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Published :
- 2008
- Qualification Status :
- Not Qualified
- Frequency :
- 50MHz
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Breakdown Voltage :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- hFE Min :
- 50
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Datasheets
- KST55MTF
PNP 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST55MTF Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at -4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
KST55MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KST55MTF Applications
There are a lot of ON Semiconductor
KST55MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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