KST55MTF
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- Mfr.Part #
- KST55MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SOT23-3
- Stock
- 3,428
- In Stock ：
- 3,428
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Base Part Number :
- KST55
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- -250mV
- Weight :
- 30mg
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -4V
- Transistor Application :
- AMPLIFIER
- Current Rating :
- -500mA
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Max Collector Current :
- 500mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 50MHz
- Max Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- -60V
- Collector Emitter Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Element Material :
- SILICON
- hFE Min :
- 50
- Published :
- 2008
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 350mW
- Frequency :
- 50MHz
- Number of Elements :
- 1
- Element Configuration :
- Single
- Factory Lead Time :
- 6 Weeks
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 350mW
- Voltage - Rated DC :
- -60V
- Transition Frequency :
- 50MHz
- Datasheets
- KST55MTF
PNP 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST55MTF Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at -4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
KST55MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KST55MTF Applications
There are a lot of ON Semiconductor
KST55MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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