KST5401MTF
- Mfr.Part #
- KST5401MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.5A SOT23-3
- Stock
- 11,091
- In Stock :
- 11,091
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 50mA 5V
- Gain Bandwidth Product :
- 300MHz
- Frequency :
- 300MHz
- Terminal Finish :
- Tin (Sn)
- Width :
- 1.3mm
- Packaging :
- Tape and Reel (TR)
- Height :
- 970μm
- Lead Free :
- Lead Free
- hFE Min :
- 60
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Weight :
- 30mg
- Base Part Number :
- KST5401
- Power Dissipation :
- 350mW
- Published :
- 2002
- Voltage - Rated DC :
- -150V
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 45V
- Current Rating :
- -500mA
- Max Power Dissipation :
- 350mW
- Element Configuration :
- Single
- Max Operating Temperature :
- 150°C
- Collector Emitter Saturation Voltage :
- -500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 500mA
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Length :
- 2.9mm
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- -160V
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 150V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Datasheets
- KST5401MTF

PNP 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST5401MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 50mA 5V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
KST5401MTF Features
the DC current gain for this device is 60 @ 50mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 100MHz
KST5401MTF Applications
There are a lot of ON Semiconductor
KST5401MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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