KST5551MTF
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- Mfr.Part #
- KST5551MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A SOT23-3
- Stock
- 4,960
- In Stock ：
- 4,960
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 80
- Gain Bandwidth Product :
- 300MHz
- Terminal Position :
- Dual
- Length :
- 2.9mm
- Mount :
- Surface Mount
- Frequency :
- 300MHz
- Lead Free :
- Lead Free
- Max Collector Current :
- 600mA
- Radiation Hardening :
- No
- Power Dissipation :
- 350mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 600mA
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 350mW
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Collector Emitter Voltage (VCEO) :
- 160V
- Weight :
- 30mg
- Collector Emitter Breakdown Voltage :
- 160V
- Height :
- 970μm
- Width :
- 1.3mm
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 160V
- Collector Base Voltage (VCBO) :
- 180V
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- Published :
- 2003
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Collector Emitter Saturation Voltage :
- 200mV
- Factory Lead Time :
- 6 Weeks
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 160V
- Base Part Number :
- KST5551
- Datasheets
- KST5551MTF
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST5551MTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 160V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
KST5551MTF Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
KST5551MTF Applications
There are a lot of ON Semiconductor
KST5551MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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