KST56MTF
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- Mfr.Part #
- KST56MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SOT23-3
- Stock
- 6,960
- In Stock ：
- 6,960
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Base Part Number :
- KST56
- Pbfree Code :
- yes
- Max Operating Temperature :
- 150°C
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -250mV
- Weight :
- 30mg
- Emitter Base Voltage (VEBO) :
- -4V
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -80V
- Voltage - Rated DC :
- -80V
- Current Rating :
- -500mA
- Transition Frequency :
- 50MHz
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Polarity/Channel Type :
- PNP
- Published :
- 2008
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- hFE Min :
- 50
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage :
- 80V
- Frequency :
- 50MHz
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 80V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 350mW
- Power Dissipation :
- 350mW
- Factory Lead Time :
- 6 Weeks
- Max Collector Current :
- 500mA
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Datasheets
- KST56MTF
PNP 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST56MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
KST56MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KST56MTF Applications
There are a lot of ON Semiconductor
KST56MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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