KST5551MTF
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- Mfr.Part #
- KST5551MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A SOT23-3
- Stock
- 4,960
- In Stock ：
- 4,960
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 600mA
- Current Rating :
- 600mA
- Max Power Dissipation :
- 350mW
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Published :
- 2003
- Height :
- 970μm
- Weight :
- 30mg
- Gain Bandwidth Product :
- 300MHz
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 160V
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Power Dissipation :
- 350mW
- Transition Frequency :
- 100MHz
- Base Part Number :
- KST5551
- Collector Emitter Voltage (VCEO) :
- 160V
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- RoHS Compliant
- Frequency :
- 300MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.3mm
- hFE Min :
- 80
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 200mV
- Transistor Element Material :
- SILICON
- Length :
- 2.9mm
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 160V
- Collector Base Voltage (VCBO) :
- 180V
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Datasheets
- KST5551MTF
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST5551MTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 160V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
KST5551MTF Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
KST5551MTF Applications
There are a lot of ON Semiconductor
KST5551MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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