KST5551MTF
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- Mfr.Part #
- KST5551MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A SOT23-3
- Stock
- 4,960
- In Stock ：
- 4,960
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 300MHz
- hFE Min :
- 80
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 160V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 160V
- Max Power Dissipation :
- 350mW
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Power Dissipation :
- 350mW
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 180V
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Factory Lead Time :
- 6 Weeks
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 600mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 200mV
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 600mA
- Weight :
- 30mg
- JESD-609 Code :
- e3
- Width :
- 1.3mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Frequency :
- 300MHz
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 160V
- Length :
- 2.9mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2003
- Height :
- 970μm
- Polarity/Channel Type :
- NPN
- Base Part Number :
- KST5551
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 160V
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Datasheets
- KST5551MTF
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST5551MTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 160V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
KST5551MTF Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
KST5551MTF Applications
There are a lot of ON Semiconductor
KST5551MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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