KSP10TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Factory Lead Time :

7 Weeks

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Width :

3.86mm

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Operating Temperature :

150°C TJ

Power Dissipation :

350mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

25V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

25V

Collector Emitter Saturation Voltage :

500mV

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

25V

Number of Pins :

3

Transistor Element Material :

SILICON

hFE Min :

60

Current Rating :

100mA

Frequency :

650MHz

Emitter Base Voltage (VEBO) :

3V

Packaging :

Tape and Box (TB)

Number of Terminations :

3

Transistor Type :

NPN

Max Power Dissipation :

350mW

Height :

4.58mm

Gain Bandwidth Product :

650MHz

Lead Free :

Lead Free

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Mount :

Through Hole

Max Collector Current :

4mA

Element Configuration :

Single

Collector Base Voltage (VCBO) :

30V

Length :

4.58mm

Base Part Number :

KSP10

Voltage - Rated DC :

25V

Collector-Base Capacitance-Max :

0.7pF

Terminal Finish :

Tin (Sn)

Weight :

240mg

Transition Frequency :

650MHz

Polarity/Channel Type :

NPN

Published :

2002