KSP10BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

ECCN Code :

EAR99

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

25V

Gain Bandwidth Product :

650MHz

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

3V

Lead Free :

Lead Free

Max Power Dissipation :

350mW

Published :

2002

Pbfree Code :

yes

Length :

4.58mm

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

25V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Element Configuration :

Single

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Collector-Base Capacitance-Max :

0.7pF

Factory Lead Time :

6 Weeks

Number of Terminations :

3

Frequency :

650MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Current Rating :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Max Collector Current :

50mA

Transistor Element Material :

SILICON

Transition Frequency :

650MHz

Collector Base Voltage (VCBO) :

30V

Base Part Number :

KSP10

Terminal Position :

BOTTOM

Width :

3.86mm

Operating Temperature :

150°C TJ

Height :

4.58mm

Number of Pins :

3

hFE Min :

60

Power Dissipation :

350mW

Collector Emitter Saturation Voltage :

500mV

Radiation Hardening :

No

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Weight :

179mg

Voltage - Rated DC :

25V

Packaging :

Bulk