KSP10BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Max Power Dissipation :

350mW

Frequency :

650MHz

Height :

4.58mm

Base Part Number :

KSP10

Mount :

Through Hole

Transistor Element Material :

SILICON

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

hFE Min :

60

Operating Temperature :

150°C TJ

REACH SVHC :

No SVHC

Pbfree Code :

yes

ECCN Code :

EAR99

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Number of Pins :

3

Length :

4.58mm

Published :

2002

Voltage - Rated DC :

25V

Current Rating :

100mA

Width :

3.86mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector-Base Capacitance-Max :

0.7pF

Emitter Base Voltage (VEBO) :

3V

Gain Bandwidth Product :

650MHz

Number of Terminations :

3

Polarity/Channel Type :

NPN

Transition Frequency :

650MHz

Terminal Position :

BOTTOM

Power Dissipation :

350mW

Collector Base Voltage (VCBO) :

30V

Collector Emitter Breakdown Voltage :

25V

Weight :

179mg

Factory Lead Time :

6 Weeks

Mounting Type :

Through Hole

Transistor Type :

NPN

Number of Elements :

1

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Collector Emitter Saturation Voltage :

500mV

Max Collector Current :

50mA

Collector Emitter Voltage (VCEO) :

25V

Lead Free :

Lead Free

Packaging :

Bulk