KSP10BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Element Configuration :

Single

Radiation Hardening :

No

Max Power Dissipation :

350mW

hFE Min :

60

Number of Pins :

3

Voltage - Rated DC :

25V

Published :

2002

Factory Lead Time :

6 Weeks

Base Part Number :

KSP10

Collector Emitter Voltage (VCEO) :

25V

Packaging :

Bulk

Mount :

Through Hole

Collector Emitter Saturation Voltage :

500mV

Collector Emitter Breakdown Voltage :

25V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Collector-Base Capacitance-Max :

0.7pF

Power Dissipation :

350mW

RoHS Status :

ROHS3 Compliant

Height :

4.58mm

Number of Terminations :

3

REACH SVHC :

No SVHC

Frequency :

650MHz

Terminal Position :

BOTTOM

Gain Bandwidth Product :

650MHz

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Number of Elements :

1

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

30V

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

3V

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Length :

4.58mm

ECCN Code :

EAR99

Max Collector Current :

50mA

Transition Frequency :

650MHz

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Weight :

179mg

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Width :

3.86mm

Current Rating :

100mA

Transistor Type :

NPN