KSP13TA
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- Mfr.Part #
- KSP13TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A TO92-3
- Stock
- 12,341
- In Stock ：
- 12,341
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 125MHz
- Factory Lead Time :
- 6 Weeks
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Collector Emitter Voltage (VCEO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 500mA
- Current Rating :
- 500mA
- Transition Frequency :
- 125MHz
- Polarity :
- NPN
- Radiation Hardening :
- No
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Published :
- 2007
- Transistor Type :
- NPN - Darlington
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Weight :
- 240mg
- Max Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Base Part Number :
- KSP13
- Voltage - Rated DC :
- 30V
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Box (TB)
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 30V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1.5V
- Number of Pins :
- 3
- hFE Min :
- 10000
- Collector Emitter Breakdown Voltage :
- 30V
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 10V
- Datasheets
- KSP13TA
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP13TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 125MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 500mA volts.
KSP13TA Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
KSP13TA Applications
There are a lot of ON Semiconductor
KSP13TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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