KSD882YSTU
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- Mfr.Part #
- KSD882YSTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A TO126-3
- Stock
- 18,721
- In Stock ：
- 18,721
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 90MHz
- Collector Emitter Saturation Voltage :
- 300mV
- Weight :
- 761mg
- Terminal Finish :
- Tin (Sn)
- Width :
- 3.45mm
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 8.3mm
- Transistor Type :
- NPN
- Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 90MHz
- Package / Case :
- TO-225AA, TO-126-3
- ECCN Code :
- EAR99
- Max Collector Current :
- 3A
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 30V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 11.2mm
- Transition Frequency :
- 90MHz
- hFE Min :
- 60
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Base Part Number :
- KSD882
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Current Rating :
- 3A
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Voltage (VCEO) :
- 30V
- Factory Lead Time :
- 19 Weeks
- Number of Terminations :
- 3
- Packaging :
- Tube
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Case Connection :
- Isolated
- Datasheets
- KSD882YSTU
NPN -55°C~150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSD882YSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 1A 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 90MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
KSD882YSTU Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
KSD882YSTU Applications
There are a lot of ON Semiconductor
KSD882YSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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