KSD882YSTU
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- Mfr.Part #
- KSD882YSTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A TO126-3
- Stock
- 18,721
- In Stock ：
- 18,721
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Current Rating :
- 3A
- Case Connection :
- Isolated
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 1W
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Transistor Type :
- NPN
- Frequency :
- 90MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Base Part Number :
- KSD882
- Length :
- 8.3mm
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 60
- Collector Emitter Saturation Voltage :
- 300mV
- Packaging :
- Tube
- Gain Bandwidth Product :
- 90MHz
- Voltage - Rated DC :
- 30V
- Mount :
- Through Hole
- Number of Elements :
- 1
- Weight :
- 761mg
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Height :
- 11.2mm
- Number of Pins :
- 3
- Published :
- 2005
- ECCN Code :
- EAR99
- Package / Case :
- TO-225AA, TO-126-3
- Factory Lead Time :
- 19 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 40V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 90MHz
- Max Collector Current :
- 3A
- Element Configuration :
- Single
- Width :
- 3.45mm
- Collector Emitter Breakdown Voltage :
- 30V
- Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 30V
- Datasheets
- KSD882YSTU
KSD882YSTU Documents
NPN -55°C~150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSD882YSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 1A 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 90MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
KSD882YSTU Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
KSD882YSTU Applications
There are a lot of ON Semiconductor
KSD882YSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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