KSD882YS

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

30V

Current - Collector Cutoff (Max) :

1μA ICBO

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

2 Weeks

Published :

2005

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Number of Terminations :

3

Transistor Type :

NPN

Transition Frequency :

90MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 1A 2V

Collector Emitter Saturation Voltage :

300mV

Package / Case :

TO-225AA, TO-126-3

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

30V

Radiation Hardening :

No

Max Power Dissipation :

1W

Packaging :

Bulk

Terminal Finish :

Tin (Sn)

Case Connection :

Isolated

Power Dissipation :

1W

Gain Bandwidth Product :

90MHz

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Number of Pins :

3

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Collector Current :

3A

Transistor Element Material :

SILICON

Frequency :

90MHz

Mounting Type :

Through Hole

Pbfree Code :

yes

hFE Min :

60

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Weight :

761mg

JESD-609 Code :

e3

Element Configuration :

Single

Current Rating :

3A

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

30V

Collector Base Voltage (VCBO) :

40V

Base Part Number :

KSD882