KSD882YS
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- Mfr.Part #
- KSD882YS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A TO126-3
- Stock
- 527
- In Stock ：
- 527
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Weight :
- 761mg
- Voltage - Rated DC :
- 30V
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 300mV
- Published :
- 2005
- Base Part Number :
- KSD882
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Frequency :
- 90MHz
- hFE Min :
- 60
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 3A
- Mount :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Current Rating :
- 3A
- Element Configuration :
- Single
- Package / Case :
- TO-225AA, TO-126-3
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 90MHz
- Gain Bandwidth Product :
- 90MHz
- Collector Emitter Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Case Connection :
- Isolated
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Power Dissipation :
- 1W
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Datasheets
- KSD882YS
KSD882YS Documents
NPN -55°C~150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
KSD882YS Overview
This device has a DC current gain of 160 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In this part, there is a transition frequency of 90MHz.The maximum collector current is 3A volts.
KSD882YS Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
KSD882YS Applications
There are a lot of ON Semiconductor
KSD882YS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| KSD882OS | onsemi | 34,397 | TRANS NPN 30V 3A TO126-3 |
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