KSD882YS

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

KSD882

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

1μA ICBO

Max Collector Current :

3A

Weight :

761mg

Operating Temperature :

-55°C~150°C TJ

hFE Min :

60

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Pbfree Code :

yes

Voltage - Rated DC :

30V

Power Dissipation :

1W

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 1A 2V

Collector Base Voltage (VCBO) :

40V

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

30V

Lead Free :

Lead Free

Number of Pins :

3

Transition Frequency :

90MHz

Collector Emitter Saturation Voltage :

300mV

Mount :

Through Hole

Number of Terminations :

3

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

90MHz

Collector Emitter Breakdown Voltage :

30V

Published :

2005

JESD-609 Code :

e3

ECCN Code :

EAR99

Max Power Dissipation :

1W

Element Configuration :

Single

Case Connection :

Isolated

Transistor Element Material :

SILICON

Package / Case :

TO-225AA, TO-126-3

Number of Elements :

1

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

2 Weeks

Current Rating :

3A

Polarity/Channel Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Frequency :

90MHz

Transistor Type :

NPN

Packaging :

Bulk