KSD880O
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- Mfr.Part #
- KSD880O
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220-3
- Stock
- 9,015
- In Stock ：
- 9,015
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3
- Frequency :
- 3MHz
- Voltage - Rated DC :
- 60V
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time :
- 2 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 400mV
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 80V
- Power Dissipation :
- 30W
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 300mA, 3A
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Transition Frequency :
- 3MHz
- Max Power Dissipation :
- 30W
- Gain Bandwidth Product :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 1.8g
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 500mA 5V
- Base Part Number :
- KSD880
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- Max Collector Current :
- 3A
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Current Rating :
- 3A
- Emitter Base Voltage (VEBO) :
- 7V
- Published :
- 2000
- Polarity/Channel Type :
- NPN
- hFE Min :
- 60
- Radiation Hardening :
- No
- Datasheets
- KSD880O
KSD880O Documents
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole
KSD880O Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 500mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 1V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 3MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
KSD880O Features
the DC current gain for this device is 60 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz
KSD880O Applications
There are a lot of ON Semiconductor
KSD880O applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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