KSD880O
- Mfr.Part #
- KSD880O
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220-3
- Stock
- 9,015
- In Stock :
- 9,015
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Weight :
- 1.8g
- Transition Frequency :
- 3MHz
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 60V
- Gain Bandwidth Product :
- 3MHz
- Collector Emitter Saturation Voltage :
- 400mV
- Published :
- 2000
- Frequency :
- 3MHz
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- hFE Min :
- 60
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 60V
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Package / Case :
- TO-220-3
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Max Collector Current :
- 3A
- Current Rating :
- 3A
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- KSD880
- Emitter Base Voltage (VEBO) :
- 7V
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 500mA 5V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 30W
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 300mA, 3A
- Lead Free :
- Lead Free
- Power Dissipation :
- 30W
- Datasheets
- KSD880O

NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole
KSD880O Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 500mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 1V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 3MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
KSD880O Features
the DC current gain for this device is 60 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz
KSD880O Applications
There are a lot of ON Semiconductor
KSD880O applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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