KSD880O

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Mfr.Part #
KSD880O
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 60V 3A TO220-3
Stock
9,015
In Stock :
9,015

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
AMPLIFIER
Polarity/Channel Type :
NPN
Factory Lead Time :
2 Weeks
Element Configuration :
Single
Pbfree Code :
yes
Voltage - Rated DC :
60V
Collector Emitter Voltage (VCEO) :
60V
Weight :
1.8g
Transition Frequency :
3MHz
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
60V
Gain Bandwidth Product :
3MHz
Collector Emitter Saturation Voltage :
400mV
Published :
2000
Frequency :
3MHz
Radiation Hardening :
No
Number of Terminations :
3
Transistor Type :
NPN
hFE Min :
60
Number of Pins :
3
Max Breakdown Voltage :
60V
Mount :
Through Hole
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Package / Case :
TO-220-3
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
JESD-609 Code :
e3
Max Collector Current :
3A
Current Rating :
3A
Transistor Element Material :
SILICON
Packaging :
Bulk
Collector Emitter Breakdown Voltage :
80V
Base Part Number :
KSD880
Emitter Base Voltage (VEBO) :
7V
Operating Temperature :
150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 500mA 5V
Current - Collector Cutoff (Max) :
100μA ICBO
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
30W
ECCN Code :
EAR99
JEDEC-95 Code :
TO-220AB
Vce Saturation (Max) @ Ib, Ic :
1V @ 300mA, 3A
Lead Free :
Lead Free
Power Dissipation :
30W
Datasheets
KSD880O
Introducing Transistors - Bipolar (BJT) - Single onsemi KSD880O from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, Base Part Number:KSD880, Operating Temperature:150°C TJ, KSD880O pinout, KSD880O datasheet PDF, KSD880O amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD880O ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSD880O


NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole

KSD880O Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 500mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 1V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 3MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 3A volts can be achieved.

KSD880O Features


the DC current gain for this device is 60 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz


KSD880O Applications


There are a lot of ON Semiconductor
KSD880O applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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