KSD882YSTSSTU
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- Mfr.Part #
- KSD882YSTSSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A TO126-3
- Stock
- 30,175
- In Stock ：
- 30,175
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Current - Collector (Ic) (Max) :
- 3A
- Base Part Number :
- KSD882
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Power - Max :
- 1W
- Frequency - Transition :
- 90MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Datasheets
- KSD882YSTSSTU
NPN -55°C~150°C TJ 1μA ICBO TO-225AA, TO-126-3 Tube Through Hole
KSD882YSTSSTU Overview
This device has a DC current gain of 160 @ 1A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 30V maximal voltage is present.
KSD882YSTSSTU Features
the DC current gain for this device is 160 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
KSD882YSTSSTU Applications
There are a lot of ON Semiconductor
KSD882YSTSSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| KSD882YSTSTU | onsemi | 27,609 | TRANS NPN 30V 3A TO126-3 |
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| KSD882YSTU | onsemi | 18,721 | TRANS NPN 30V 3A TO126-3 |
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