KSD882YSTU
- Mfr.Part #
- KSD882YSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A TO126-3
- Stock
- 18,721
- In Stock :
- 18,721
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 60
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Package / Case :
- TO-225AA, TO-126-3
- Published :
- 2005
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 3A
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 761mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Length :
- 8.3mm
- Frequency :
- 90MHz
- Max Collector Current :
- 3A
- Width :
- 3.45mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Collector Emitter Voltage (VCEO) :
- 30V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 90MHz
- Power Dissipation :
- 1W
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Case Connection :
- Isolated
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Max Power Dissipation :
- 1W
- Transistor Application :
- AMPLIFIER
- Height :
- 11.2mm
- Voltage - Rated DC :
- 30V
- Gain Bandwidth Product :
- 90MHz
- Collector Base Voltage (VCBO) :
- 40V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Base Part Number :
- KSD882
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Factory Lead Time :
- 19 Weeks
- Collector Emitter Saturation Voltage :
- 300mV
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Datasheets
- KSD882YSTU

NPN -55°C~150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSD882YSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 1A 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 90MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
KSD882YSTU Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
KSD882YSTU Applications
There are a lot of ON Semiconductor
KSD882YSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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