KSD882YSTU
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- Mfr.Part #
- KSD882YSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A TO126-3
- Stock
- 18,721
- In Stock ：
- 18,721
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Width :
- 3.45mm
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Saturation Voltage :
- 300mV
- ECCN Code :
- EAR99
- Base Part Number :
- KSD882
- Current Rating :
- 3A
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-225AA, TO-126-3
- Pbfree Code :
- yes
- Case Connection :
- Isolated
- Voltage - Rated DC :
- 30V
- Transistor Element Material :
- SILICON
- Length :
- 8.3mm
- Max Collector Current :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Tube
- Frequency :
- 90MHz
- Max Power Dissipation :
- 1W
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 19 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Polarity/Channel Type :
- NPN
- Height :
- 11.2mm
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Published :
- 2005
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Transition Frequency :
- 90MHz
- Collector Base Voltage (VCBO) :
- 40V
- Power Dissipation :
- 1W
- Weight :
- 761mg
- Radiation Hardening :
- No
- Mount :
- Through Hole
- hFE Min :
- 60
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 90MHz
- Datasheets
- KSD882YSTU
KSD882YSTU Documents
NPN -55°C~150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSD882YSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 1A 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 90MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
KSD882YSTU Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
KSD882YSTU Applications
There are a lot of ON Semiconductor
KSD882YSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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