KSD882YSTU
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- Mfr.Part #
- KSD882YSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A TO126-3
- Stock
- 18,721
- In Stock ：
- 18,721
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Base Part Number :
- KSD882
- Factory Lead Time :
- 19 Weeks
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 8.3mm
- Packaging :
- Tube
- Case Connection :
- Isolated
- Width :
- 3.45mm
- Voltage - Rated DC :
- 30V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Height :
- 11.2mm
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 3A
- Collector Emitter Saturation Voltage :
- 300mV
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Published :
- 2005
- Collector Emitter Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Number of Elements :
- 1
- hFE Min :
- 60
- Power Dissipation :
- 1W
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-225AA, TO-126-3
- Number of Terminations :
- 3
- Frequency :
- 90MHz
- Gain Bandwidth Product :
- 90MHz
- Collector Base Voltage (VCBO) :
- 40V
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Number of Pins :
- 3
- Max Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 90MHz
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Weight :
- 761mg
- Current Rating :
- 3A
- Datasheets
- KSD882YSTU
KSD882YSTU Documents
NPN -55°C~150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSD882YSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 1A 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 90MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
KSD882YSTU Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
KSD882YSTU Applications
There are a lot of ON Semiconductor
KSD882YSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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