KSD882YSTU

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Mfr.Part #
KSD882YSTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 30V 3A TO126-3
Stock
18,721
In Stock :
18,721

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
90MHz
Factory Lead Time :
19 Weeks
Package / Case :
TO-225AA, TO-126-3
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Pbfree Code :
yes
Transistor Type :
NPN
Width :
3.45mm
Mount :
Through Hole
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
hFE Min :
60
Number of Terminations :
3
Published :
2005
Power Dissipation :
1W
Frequency :
90MHz
Voltage - Rated DC :
30V
Current Rating :
3A
Collector Emitter Saturation Voltage :
300mV
Max Collector Current :
3A
Packaging :
Tube
JESD-609 Code :
e3
Case Connection :
Isolated
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
5V
Gain Bandwidth Product :
90MHz
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
30V
Height :
11.2mm
Lead Free :
Lead Free
Collector Base Voltage (VCBO) :
40V
Max Power Dissipation :
1W
Current - Collector Cutoff (Max) :
1μA ICBO
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
AMPLIFIER
Polarity/Channel Type :
NPN
Length :
8.3mm
Element Configuration :
Single
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
KSD882
Weight :
761mg
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Number of Elements :
1
Introducing Transistors - Bipolar (BJT) - Single onsemi KSD882YSTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Base Part Number:KSD882, Number of Pins:3, KSD882YSTU pinout, KSD882YSTU datasheet PDF, KSD882YSTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD882YSTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSD882YSTU


NPN -55°C~150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

KSD882YSTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 1A 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 90MHz is present in the part.Collector current can be as low as 3A volts at its maximum.

KSD882YSTU Features


the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz


KSD882YSTU Applications


There are a lot of ON Semiconductor
KSD882YSTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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