KSD882YSTU

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Mfr.Part #
KSD882YSTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 30V 3A TO126-3
Stock
18,721
In Stock :
18,721

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
60
Polarity/Channel Type :
NPN
Radiation Hardening :
No
Element Configuration :
Single
Package / Case :
TO-225AA, TO-126-3
Published :
2005
ECCN Code :
EAR99
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Terminal Finish :
Tin (Sn)
Current Rating :
3A
RoHS Status :
ROHS3 Compliant
Weight :
761mg
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Length :
8.3mm
Frequency :
90MHz
Max Collector Current :
3A
Width :
3.45mm
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Collector Emitter Voltage (VCEO) :
30V
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Transition Frequency :
90MHz
Power Dissipation :
1W
Packaging :
Tube
Emitter Base Voltage (VEBO) :
5V
Transistor Type :
NPN
Mounting Type :
Through Hole
Case Connection :
Isolated
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 1A 2V
Max Power Dissipation :
1W
Transistor Application :
AMPLIFIER
Height :
11.2mm
Voltage - Rated DC :
30V
Gain Bandwidth Product :
90MHz
Collector Base Voltage (VCBO) :
40V
Current - Collector Cutoff (Max) :
1μA ICBO
Base Part Number :
KSD882
Mount :
Through Hole
Number of Terminations :
3
Factory Lead Time :
19 Weeks
Collector Emitter Saturation Voltage :
300mV
Collector Emitter Breakdown Voltage :
30V
Number of Elements :
1
Lead Free :
Lead Free
Pbfree Code :
yes
Number of Pins :
3
Datasheets
KSD882YSTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSD882YSTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Base Part Number:KSD882, Number of Terminations:3, Number of Pins:3, KSD882YSTU pinout, KSD882YSTU datasheet PDF, KSD882YSTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD882YSTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSD882YSTU


NPN -55°C~150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

KSD882YSTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 1A 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 90MHz is present in the part.Collector current can be as low as 3A volts at its maximum.

KSD882YSTU Features


the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz


KSD882YSTU Applications


There are a lot of ON Semiconductor
KSD882YSTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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