KSD882OS

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Mfr.Part #
KSD882OS
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 30V 3A TO126-3
Stock
34,397
In Stock :
34,397

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Power - Max :
1W
Base Part Number :
KSD882
Transistor Application :
AMPLIFIER
Polarity/Channel Type :
NPN
HTS Code :
8541.29.00.75
Number of Elements :
1
Surface Mount :
No
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Transition Frequency :
90MHz
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector (Ic) (Max) :
3A
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 2V
Mounting Type :
Through Hole
Frequency - Transition :
90MHz
Qualification Status :
Not Qualified
Package / Case :
TO-225AA, TO-126-3
Current - Collector Cutoff (Max) :
1μA ICBO
Reach Compliance Code :
Compliant
Voltage - Collector Emitter Breakdown (Max) :
30V
RoHS Status :
RoHS Compliant
Transistor Element Material :
SILICON
Packaging :
Bulk
ECCN Code :
EAR99
Datasheets
KSD882OS
Introducing Transistors - Bipolar (BJT) - Single onsemi KSD882OS from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:KSD882, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, KSD882OS pinout, KSD882OS datasheet PDF, KSD882OS amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD882OS ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSD882OS


NPN -55°C~150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

KSD882OS Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.Parts of this part have transition frequencies of 90MHz.This device displays a 30V maximum voltage - Collector Emitter Breakdown.

KSD882OS Features


the DC current gain for this device is 100 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
a transition frequency of 90MHz


KSD882OS Applications


There are a lot of ON Semiconductor
KSD882OS applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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