KSD882YSTSTU
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- Mfr.Part #
- KSD882YSTSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A TO126-3
- Stock
- 27,609
- In Stock ：
- 27,609
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Transistor Type :
- NPN
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Power - Max :
- 1W
- Current - Collector (Ic) (Max) :
- 3A
- Package / Case :
- TO-225AA, TO-126-3
- Frequency - Transition :
- 90MHz
- Base Part Number :
- KSD882
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- KSD882YSTSTU
NPN -55°C~150°C TJ 1μA ICBO TO-225AA, TO-126-3 Tube Through Hole
KSD882YSTSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
KSD882YSTSTU Features
the DC current gain for this device is 160 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
KSD882YSTSTU Applications
There are a lot of ON Semiconductor
KSD882YSTSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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