KSD569RTU
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- Mfr.Part #
- KSD569RTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 7A TO220-3
- Stock
- 24,054
- In Stock ：
- 24,054
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 1.5W
- Transistor Type :
- NPN
- Packaging :
- Tube
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 3A 1V
- Supplier Device Package :
- TO-220-3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Current - Collector (Ic) (Max) :
- 7A
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-220-3
- Datasheets
- KSD569RTU
NPN 150°C TJ 10μA ICBO TO-220-3 Tube Through Hole
KSD569RTU Overview
This device has a DC current gain of 40 @ 3A 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 500mA, 5A means Ic has reached its maximum value(saturated).Product package TO-220-3 comes from the supplier.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
KSD569RTU Features
the DC current gain for this device is 40 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-220-3
KSD569RTU Applications
There are a lot of ON Semiconductor
KSD569RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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