KSD5041QTA
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- Mfr.Part #
- KSD5041QTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO92-3
- Stock
- 20,000
- In Stock ：
- 20,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 150MHz
- Published :
- 2017
- Terminal Position :
- BOTTOM
- hFE Min :
- 180
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 230 @ 500mA 2V
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 150MHz
- Voltage - Rated DC :
- 20V
- Power Dissipation :
- 750mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 20V
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 1V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 5A
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 20V
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 3A
- JESD-609 Code :
- e3
- Packaging :
- Tape and Box (TB)
- Terminal Finish :
- Tin (Sn)
- Weight :
- 240mg
- Collector Emitter Voltage (VCEO) :
- 20V
- Transition Frequency :
- 150MHz
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Current Rating :
- 5A
- Emitter Base Voltage (VEBO) :
- 7V
- Max Power Dissipation :
- 750mW
- Base Part Number :
- KSD5041
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 40V
- Datasheets
- KSD5041QTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD5041QTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 230 @ 500mA 2V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 100mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
KSD5041QTA Features
the DC current gain for this device is 230 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz
KSD5041QTA Applications
There are a lot of ON Semiconductor
KSD5041QTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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