KSD526OTU
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- Mfr.Part #
- KSD526OTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A TO220-3
- Stock
- 1,551
- In Stock ：
- 1,551
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 300mA, 3A
- Supplier Device Package :
- TO-220-3
- Current - Collector (Ic) (Max) :
- 4A
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 5V
- Frequency - Transition :
- 8MHz
- Current - Collector Cutoff (Max) :
- 30μA ICBO
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 30W
- Datasheets
- KSD526OTU
NPN 150°C TJ 30μA ICBO TO-220-3 Tube Through Hole
KSD526OTU Overview
In this device, the DC current gain is 70 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 300mA, 3A.Supplier device package TO-220-3 comes with the product.The device exhibits a collector-emitter breakdown at 80V.
KSD526OTU Features
the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 300mA, 3A
the supplier device package of TO-220-3
KSD526OTU Applications
There are a lot of Rochester Electronics, LLC
KSD526OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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