KSD5041QBU
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- Mfr.Part #
- KSD5041QBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO92-3
- Stock
- 37,755
- In Stock ：
- 37,755
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Max Collector Current :
- 5A
- Mount :
- Through Hole
- Current Rating :
- 5A
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Saturation Voltage :
- 1V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 20V
- Emitter Base Voltage (VEBO) :
- 7V
- Mounting Type :
- Through Hole
- Frequency :
- 150MHz
- Power Dissipation :
- 750mW
- Base Part Number :
- KSD5041
- Published :
- 2017
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- MATTE TIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- hFE Min :
- 180
- ECCN Code :
- EAR99
- Transition Frequency :
- 150MHz
- Polarity/Channel Type :
- NPN
- Packaging :
- Bulk
- Voltage - Rated DC :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 230 @ 500mA 2V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Max Power Dissipation :
- 750mW
- Collector Base Voltage (VCBO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 3A
- Collector Emitter Breakdown Voltage :
- 20V
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 150MHz
- Datasheets
- KSD5041QBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSD5041QBU Overview
In this device, the DC current gain is 230 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
KSD5041QBU Features
the DC current gain for this device is 230 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz
KSD5041QBU Applications
There are a lot of ON Semiconductor
KSD5041QBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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