KSD5041QBU
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- Mfr.Part #
- KSD5041QBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO92-3
- Stock
- 37,755
- In Stock ：
- 37,755
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Transition Frequency :
- 150MHz
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Collector Emitter Saturation Voltage :
- 1V
- Collector Base Voltage (VCBO) :
- 40V
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Frequency :
- 150MHz
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Current Rating :
- 5A
- Max Power Dissipation :
- 750mW
- hFE Min :
- 180
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 3A
- Base Part Number :
- KSD5041
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 20V
- Lead Free :
- Lead Free
- Max Collector Current :
- 5A
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 230 @ 500mA 2V
- Published :
- 2017
- Power Dissipation :
- 750mW
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 20V
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- 20V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Elements :
- 1
- Terminal Finish :
- MATTE TIN
- Datasheets
- KSD5041QBU
KSD5041QBU Documents
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSD5041QBU Overview
In this device, the DC current gain is 230 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
KSD5041QBU Features
the DC current gain for this device is 230 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz
KSD5041QBU Applications
There are a lot of ON Semiconductor
KSD5041QBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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