KSD5041RTA
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- Mfr.Part #
- KSD5041RTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO92-3
- Stock
- 38,167
- In Stock ：
- 38,167
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 340 @ 500mA 2V
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Published :
- 2002
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Tape and Box (TB)
- Mounting Type :
- Through Hole
- Current Rating :
- 5A
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 3A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Power Dissipation :
- 750mW
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 150MHz
- Number of Elements :
- 1
- Base Part Number :
- KSD5041
- Length :
- 4.58mm
- Max Collector Current :
- 5A
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 180
- Voltage - Rated DC :
- 20V
- Collector Base Voltage (VCBO) :
- 40V
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Element Material :
- SILICON
- Weight :
- 240mg
- Emitter Base Voltage (VEBO) :
- 7V
- Max Power Dissipation :
- 750mW
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 150MHz
- Polarity/Channel Type :
- NPN
- Height :
- 4.58mm
- Width :
- 3.86mm
- Collector Emitter Breakdown Voltage :
- 20V
- Max Breakdown Voltage :
- 20V
- Datasheets
- KSD5041RTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD5041RTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 340 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 20V volts.When collector current reaches its maximum, it can reach 5A volts.
KSD5041RTA Features
the DC current gain for this device is 340 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz
KSD5041RTA Applications
There are a lot of ON Semiconductor
KSD5041RTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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