KSD5041RTA
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- Mfr.Part #
- KSD5041RTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO92-3
- Stock
- 38,167
- In Stock ：
- 38,167
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 5A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Height :
- 4.58mm
- Base Part Number :
- KSD5041
- Collector Emitter Breakdown Voltage :
- 20V
- Number of Elements :
- 1
- Power Dissipation :
- 750mW
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 20V
- Pbfree Code :
- yes
- Factory Lead Time :
- 6 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 20V
- Polarity/Channel Type :
- NPN
- Frequency :
- 150MHz
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Packaging :
- Tape and Box (TB)
- Transition Frequency :
- 150MHz
- Length :
- 4.58mm
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 240mg
- Transistor Element Material :
- SILICON
- hFE Min :
- 180
- Max Collector Current :
- 5A
- Max Power Dissipation :
- 750mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 340 @ 500mA 2V
- Published :
- 2002
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 150MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Width :
- 3.86mm
- Collector Base Voltage (VCBO) :
- 40V
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 3A
- Collector Emitter Saturation Voltage :
- 1V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Datasheets
- KSD5041RTA
KSD5041RTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD5041RTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 340 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 20V volts.When collector current reaches its maximum, it can reach 5A volts.
KSD5041RTA Features
the DC current gain for this device is 340 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz
KSD5041RTA Applications
There are a lot of ON Semiconductor
KSD5041RTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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