KSD5041QTA
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- Mfr.Part #
- KSD5041QTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO92-3
- Stock
- 26,510
- In Stock ：
- 26,510
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 20V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Collector Current :
- 5A
- Frequency :
- 150MHz
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 150MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 3A
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 750mW
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- hFE Min :
- 180
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 7V
- Power Dissipation :
- 750mW
- JESD-609 Code :
- e3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 230 @ 500mA 2V
- Voltage - Rated DC :
- 20V
- Collector Base Voltage (VCBO) :
- 40V
- Weight :
- 240mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 20V
- Collector Emitter Saturation Voltage :
- 1V
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Box (TB)
- Published :
- 2017
- ECCN Code :
- EAR99
- Base Part Number :
- KSD5041
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 20V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 150MHz
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Current Rating :
- 5A
- Datasheets
- KSD5041QTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD5041QTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 230 @ 500mA 2V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 100mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
KSD5041QTA Features
the DC current gain for this device is 230 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz
KSD5041QTA Applications
There are a lot of ON Semiconductor
KSD5041QTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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