KSD5041QTA
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- Mfr.Part #
- KSD5041QTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO92-3
- Stock
- 26,510
- In Stock ：
- 26,510
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 3A
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 750mW
- Frequency :
- 150MHz
- Published :
- 2017
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 1V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- KSD5041
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 150MHz
- Element Configuration :
- Single
- Max Collector Current :
- 5A
- Collector Emitter Breakdown Voltage :
- 20V
- Weight :
- 240mg
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 230 @ 500mA 2V
- Max Breakdown Voltage :
- 20V
- Collector Emitter Voltage (VCEO) :
- 20V
- hFE Min :
- 180
- Packaging :
- Tape and Box (TB)
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 7V
- Mounting Type :
- Through Hole
- Transition Frequency :
- 150MHz
- Current Rating :
- 5A
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 40V
- Max Power Dissipation :
- 750mW
- Operating Temperature :
- 150°C TJ
- Datasheets
- KSD5041QTA
KSD5041QTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD5041QTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 230 @ 500mA 2V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 100mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
KSD5041QTA Features
the DC current gain for this device is 230 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz
KSD5041QTA Applications
There are a lot of ON Semiconductor
KSD5041QTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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