KSD5041RTA
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- Mfr.Part #
- KSD5041RTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO92-3
- Stock
- 18,795
- In Stock ：
- 18,795
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Box (TB)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 340 @ 500mA 2V
- Radiation Hardening :
- No
- Width :
- 3.86mm
- Published :
- 2002
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 20V
- Length :
- 4.58mm
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Base Part Number :
- KSD5041
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1V
- Weight :
- 240mg
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- Current Rating :
- 5A
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 40V
- Power Dissipation :
- 750mW
- Voltage - Rated DC :
- 20V
- Max Collector Current :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 3A
- Max Power Dissipation :
- 750mW
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 20V
- Height :
- 4.58mm
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Factory Lead Time :
- 6 Weeks
- Emitter Base Voltage (VEBO) :
- 7V
- Transition Frequency :
- 150MHz
- ECCN Code :
- EAR99
- hFE Min :
- 180
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 20V
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Datasheets
- KSD5041RTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD5041RTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 340 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 20V volts.When collector current reaches its maximum, it can reach 5A volts.
KSD5041RTA Features
the DC current gain for this device is 340 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz
KSD5041RTA Applications
There are a lot of ON Semiconductor
KSD5041RTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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