KSD5041QBU
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- Mfr.Part #
- KSD5041QBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO92-3
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 40V
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 750mW
- Collector Emitter Breakdown Voltage :
- 20V
- Terminal Finish :
- MATTE TIN
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Number of Terminations :
- 3
- hFE Min :
- 180
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 5A
- Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 230 @ 500mA 2V
- Power Dissipation :
- 750mW
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 3A
- Base Part Number :
- KSD5041
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 20V
- Lead Free :
- Lead Free
- Transition Frequency :
- 150MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 150MHz
- Current Rating :
- 5A
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Published :
- 2017
- Collector Emitter Voltage (VCEO) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Datasheets
- KSD5041QBU
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSD5041QBU Overview
In this device, the DC current gain is 230 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
KSD5041QBU Features
the DC current gain for this device is 230 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz
KSD5041QBU Applications
There are a lot of ON Semiconductor
KSD5041QBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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