KSD568YTU

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Mfr.Part #
KSD568YTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 60V 7A TO220-3
Stock
48,883
In Stock :
48,883

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tube
Operating Temperature :
150°C TJ
Package / Case :
TO-220-3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 500mA, 5A
Supplier Device Package :
TO-220-3
Current - Collector (Ic) (Max) :
7A
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 3A 1V
Current - Collector Cutoff (Max) :
10μA ICBO
Power - Max :
1.5W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Datasheets
KSD568YTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSD568YTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, KSD568YTU pinout, KSD568YTU datasheet PDF, KSD568YTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD568YTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSD568YTU


NPN 150°C TJ 10μA ICBO TO-220-3 Tube Through Hole

KSD568YTU Overview


In this device, the DC current gain is 100 @ 3A 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 500mA, 5A.Product comes in the supplier's device package TO-220-3.There is a 60V maximal voltage in the device due to collector-emitter breakdown.

KSD568YTU Features


the DC current gain for this device is 100 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-220-3


KSD568YTU Applications


There are a lot of ON Semiconductor
KSD568YTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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