KSD568OTU
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- Mfr.Part #
- KSD568OTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 7A TO220-3
- Stock
- 36,626
- In Stock ：
- 36,626
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Published :
- 2000
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 7A
- Mounting Type :
- Through Hole
- Power - Max :
- 1.5W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 3A 1V
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Datasheets
- KSD568OTU
NPN 150°C TJ 10μA ICBO TO-220-3 Tube Through Hole
KSD568OTU Overview
In this device, the DC current gain is 60 @ 3A 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 500mA, 5A.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
KSD568OTU Features
the DC current gain for this device is 60 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
KSD568OTU Applications
There are a lot of ON Semiconductor
KSD568OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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