KSD560YTU
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- Mfr.Part #
- KSD560YTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 5A TO220-3
- Stock
- 3
- In Stock ：
- 3
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 5A
- Continuous Collector Current :
- 5A
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Weight :
- 1.8g
- Max Power Dissipation :
- 1.5W
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5000 @ 3A 2V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- hFE Min :
- 2000
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3mA, 3A
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 100V
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 1.5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 100V
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-220-3
- Base Part Number :
- KSD560
- Element Configuration :
- Single
- Polarity :
- NPN
- Packaging :
- Tube
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 150V
- Published :
- 2000
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transistor Type :
- NPN - Darlington
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- KSD560YTU
KSD560YTU Documents
NPN - Darlington 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
KSD560YTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 5000 @ 3A 2V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 3mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.A maximum collector current of 5A volts can be achieved.
KSD560YTU Features
the DC current gain for this device is 5000 @ 3A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 3mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
KSD560YTU Applications
There are a lot of ON Semiconductor
KSD560YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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