KSD560YTU
- Mfr.Part #
- KSD560YTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 5A TO220-3
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5000 @ 3A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3mA, 3A
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 150V
- Weight :
- 1.8g
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 5A
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 7V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Current Rating :
- 5A
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1.5V
- Base Part Number :
- KSD560
- Package / Case :
- TO-220-3
- Transistor Type :
- NPN - Darlington
- Packaging :
- Tube
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- hFE Min :
- 2000
- Voltage - Rated DC :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1.5W
- Collector Emitter Voltage (VCEO) :
- 100V
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 5A
- Transistor Application :
- AMPLIFIER
- Polarity :
- NPN
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- KSD560YTU

NPN - Darlington 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
KSD560YTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 5000 @ 3A 2V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 3mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.A maximum collector current of 5A volts can be achieved.
KSD560YTU Features
the DC current gain for this device is 5000 @ 3A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 3mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
KSD560YTU Applications
There are a lot of ON Semiconductor
KSD560YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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