KSD560RTU
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- Mfr.Part #
- KSD560RTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 5A TO220-3
- Stock
- 35,698
- In Stock ：
- 35,698
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 150V
- Packaging :
- Tube
- Factory Lead Time :
- 6 Weeks
- Weight :
- 1.8g
- Polarity :
- NPN
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3mA, 3A
- Base Part Number :
- KSD560
- Published :
- 2000
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1.5V
- Number of Terminations :
- 3
- hFE Min :
- 2000
- Transistor Type :
- NPN - Darlington
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Current Rating :
- 5A
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 7V
- Mount :
- Through Hole
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Continuous Collector Current :
- 5A
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1.5W
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Voltage - Rated DC :
- 100V
- JEDEC-95 Code :
- TO-220AB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A 2V
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 100V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Datasheets
- KSD560RTU
NPN - Darlington 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
KSD560RTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 3A 2V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 3mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.Collector current can be as low as 5A volts at its maximum.
KSD560RTU Features
the DC current gain for this device is 2000 @ 3A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 3mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
KSD560RTU Applications
There are a lot of ON Semiconductor
KSD560RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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