KSD560RTSTU
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- Mfr.Part #
- KSD560RTSTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 5A TO220-3
- Stock
- 2,563
- In Stock ：
- 2,563
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1.5W
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- NPN
- Continuous Collector Current :
- 5A
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Current Rating :
- 5A
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Width :
- 4.7mm
- hFE Min :
- 2000
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3mA, 3A
- Max Collector Current :
- 5A
- Package / Case :
- TO-220-3
- Height :
- 9.4mm
- Published :
- 2000
- Factory Lead Time :
- 2 Weeks
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.1mm
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Weight :
- 1.8g
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 1.5V
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN - Darlington
- JESD-30 Code :
- R-PSFM-T3
- Base Part Number :
- KSD560
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 150V
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A 2V
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Element Material :
- SILICON
- Datasheets
- KSD560RTSTU
KSD560RTSTU Documents
NPN - Darlington 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
KSD560RTSTU Overview
DC current gain in this device equals 2000 @ 3A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 3mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 5A to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.In extreme cases, the collector current can be as low as 5A volts.
KSD560RTSTU Features
the DC current gain for this device is 2000 @ 3A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 3mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
KSD560RTSTU Applications
There are a lot of ON Semiconductor
KSD560RTSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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