KSD560R
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- Mfr.Part #
- KSD560R
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 5A TO220-3
- Stock
- 28,591
- In Stock ：
- 28,591
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3mA, 3A
- Power - Max :
- 1.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Reach Compliance Code :
- Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A 2V
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 5A
- Base Part Number :
- KSD560
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Datasheets
- KSD560R
NPN - Darlington 150°C TJ 1μA ICBO TO-220-3 Bulk Through Hole
KSD560R Overview
This device has a DC current gain of 2000 @ 3A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 100V maximal voltage is present.
KSD560R Features
the DC current gain for this device is 2000 @ 3A 2V
the vce saturation(Max) is 1.5V @ 3mA, 3A
KSD560R Applications
There are a lot of ON Semiconductor
KSD560R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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