KSD526YTU
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- Mfr.Part #
- KSD526YTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A TO220-3
- Stock
- 18,994
- In Stock ：
- 18,994
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 4A
- Weight :
- 1.8g
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 5V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Packaging :
- Tube
- Published :
- 2006
- Transition Frequency :
- 8MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 18.95mm
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Length :
- 9.9mm
- Gain Bandwidth Product :
- 8MHz
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Collector Current :
- 4A
- Factory Lead Time :
- 2 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 30W
- Width :
- 4.5mm
- Voltage - Rated DC :
- 80V
- hFE Min :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 300mA, 3A
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- KSD526
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 450mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 80V
- Frequency :
- 8MHz
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 30μA ICBO
- Pbfree Code :
- yes
- Power Dissipation :
- 30W
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Datasheets
- KSD526YTU
NPN 150°C TJ 30μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSD526YTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 450mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 300mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 8MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
KSD526YTU Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 8MHz
KSD526YTU Applications
There are a lot of ON Semiconductor
KSD526YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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