KSD526Y
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- Mfr.Part #
- KSD526Y
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A TO220-3
- Stock
- 3,772
- In Stock ：
- 3,772
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- 450mV
- Weight :
- 1.8g
- Transition Frequency :
- 8MHz
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 80V
- Number of Terminations :
- 3
- Power Dissipation :
- 30W
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 80V
- Gain Bandwidth Product :
- 8MHz
- hFE Min :
- 40
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3
- Current Rating :
- 4A
- Collector Emitter Breakdown Voltage :
- 80V
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 30W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 300mA, 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 8MHz
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 4A
- Mount :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current - Collector Cutoff (Max) :
- 30μA ICBO
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- KSD526
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Published :
- 2006
- Collector Emitter Voltage (VCEO) :
- 80V
- Element Configuration :
- Single
- Datasheets
- KSD526Y
KSD526Y Documents
NPN 150°C TJ 30μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole
KSD526Y Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 5V.The collector emitter saturation voltage is 450mV, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 8MHz.A maximum collector current of 4A volts can be achieved.
KSD526Y Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 8MHz
KSD526Y Applications
There are a lot of ON Semiconductor
KSD526Y applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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