KSD526Y
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- Mfr.Part #
- KSD526Y
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A TO220-3
- Stock
- 3,772
- In Stock ：
- 3,772
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Current Rating :
- 4A
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Frequency :
- 8MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 2 Weeks
- Voltage - Rated DC :
- 80V
- Max Collector Current :
- 4A
- Collector Emitter Saturation Voltage :
- 450mV
- Gain Bandwidth Product :
- 8MHz
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Weight :
- 1.8g
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 300mA, 3A
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 80V
- Current - Collector Cutoff (Max) :
- 30μA ICBO
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 30W
- Base Part Number :
- KSD526
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 8MHz
- hFE Min :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Max Power Dissipation :
- 30W
- Element Configuration :
- Single
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- JEDEC-95 Code :
- TO-220AB
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Datasheets
- KSD526Y
NPN 150°C TJ 30μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole
KSD526Y Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 5V.The collector emitter saturation voltage is 450mV, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 8MHz.A maximum collector current of 4A volts can be achieved.
KSD526Y Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 8MHz
KSD526Y Applications
There are a lot of ON Semiconductor
KSD526Y applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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