KSA1381ES
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- Mfr.Part #
- KSA1381ES
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.1A TO126-3
- Stock
- 5,930
- In Stock ：
- 5,930
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 150MHz
- Number of Elements :
- 1
- Frequency :
- 150MHz
- Base Part Number :
- KSA1381
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 150MHz
- hFE Min :
- 40
- Collector Emitter Saturation Voltage :
- -600mV
- Collector Emitter Breakdown Voltage :
- 300V
- Emitter Base Voltage (VEBO) :
- -5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 7W
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Current Rating :
- -100mA
- Mounting Type :
- Through Hole
- Weight :
- 761mg
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 2mA, 20mA
- JESD-30 Code :
- R-PSFM-T3
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- -300V
- Max Collector Current :
- 100mA
- Package / Case :
- TO-225AA, TO-126-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 600mV
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 7W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 10V
- Voltage - Rated DC :
- -300V
- Datasheets
- KSA1381ES
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
KSA1381ES Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.During maximum operation, collector current can be as low as 100mA volts.
KSA1381ES Features
the DC current gain for this device is 100 @ 10mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
KSA1381ES Applications
There are a lot of ON Semiconductor
KSA1381ES applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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