KSA1370FBU
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- Mfr.Part #
- KSA1370FBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 200V 0.1A TO92-3
- Stock
- 10,387
- In Stock ：
- 10,387
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 2mA, 20mA
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1W
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Supplier Device Package :
- TO-92-3
- Voltage - Collector Emitter Breakdown (Max) :
- 200V
- Current - Collector (Ic) (Max) :
- 100mA
- Base Part Number :
- KSA1370
- Transistor Type :
- PNP
- Packaging :
- Bulk
- Datasheets
- KSA1370FBU
PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
KSA1370FBU Overview
In this device, the DC current gain is 100 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 2mA, 20mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 200V.
KSA1370FBU Features
the DC current gain for this device is 100 @ 10mA 10V
the vce saturation(Max) is 600mV @ 2mA, 20mA
the supplier device package of TO-92-3
KSA1370FBU Applications
There are a lot of ON Semiconductor
KSA1370FBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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