KSA1370EBU
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- Mfr.Part #
- KSA1370EBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 200V 0.1A TO92-3
- Stock
- 21,364
- In Stock ：
- 21,364
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSA1370
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 2mA, 20mA
- Current - Collector (Ic) (Max) :
- 100mA
- Power - Max :
- 1W
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 200V
- Packaging :
- Bulk
- Supplier Device Package :
- TO-92-3
- Frequency - Transition :
- 150MHz
- Datasheets
- KSA1370EBU
PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
KSA1370EBU Overview
In this device, the DC current gain is 100 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 2mA, 20mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 200V.
KSA1370EBU Features
the DC current gain for this device is 100 @ 10mA 10V
the vce saturation(Max) is 600mV @ 2mA, 20mA
the supplier device package of TO-92-3
KSA1370EBU Applications
There are a lot of ON Semiconductor
KSA1370EBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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