KSA1175YTA
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- Mfr.Part #
- KSA1175YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92S
- Stock
- 10,865
- In Stock ：
- 10,865
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSA1175
- Frequency - Transition :
- 180MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Supplier Device Package :
- TO-92S
- Power - Max :
- 250mW
- Packaging :
- Tape and Box (TB)
- Current - Collector (Ic) (Max) :
- 150mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Datasheets
- KSA1175YTA
PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Short Body Tape & Box (TB) Through Hole
KSA1175YTA Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.Product comes in the supplier's device package TO-92S.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
KSA1175YTA Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of TO-92S
KSA1175YTA Applications
There are a lot of ON Semiconductor
KSA1175YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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