KSA1175GBU
- Mfr.Part #
- KSA1175GBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92S
- Stock
- 24,497
- In Stock :
- 24,497
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Packaging :
- Bulk
- Transistor Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Power - Max :
- 250mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Frequency - Transition :
- 180MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 150mA
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- KSA1175
- Datasheets
- KSA1175GBU

PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Short Body Bulk Through Hole
KSA1175GBU Overview
In this device, the DC current gain is 200 @ 1mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
KSA1175GBU Features
the DC current gain for this device is 200 @ 1mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
KSA1175GBU Applications
There are a lot of ON Semiconductor
KSA1175GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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