KSA1156OSTU

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Mfr.Part #
KSA1156OSTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 400V 0.5A TO126-3
Stock
5,698
In Stock :
5,698

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
100μA ICBO
Package / Case :
TO-225AA, TO-126-3
Power Dissipation :
1W
JESD-609 Code :
e3
Qualification Status :
Not Qualified
hFE Min :
30
Vce Saturation (Max) @ Ib, Ic :
1V @ 10mA, 100mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn Off Time-Max (toff) :
5000ns
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 100mA 5V
Number of Pins :
3
Max Collector Current :
500mA
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Collector Emitter Voltage (VCEO) :
400V
Collector Base Voltage (VCBO) :
-400V
Number of Elements :
1
Lead Free :
Lead Free
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Current Rating :
-500mA
Transistor Type :
PNP
Element Configuration :
Single
Emitter Base Voltage (VEBO) :
-7V
Collector Emitter Breakdown Voltage :
400V
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Max Power Dissipation :
1W
Weight :
761mg
Operating Temperature :
150°C TJ
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
-1V
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Number of Terminations :
3
Voltage - Rated DC :
-400V
Polarity/Channel Type :
PNP
Mount :
Through Hole
Base Part Number :
KSA1156
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
KSA1156OSTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA1156OSTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:KSA1156, KSA1156OSTU pinout, KSA1156OSTU datasheet PDF, KSA1156OSTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA1156OSTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA1156OSTU


PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

KSA1156OSTU Overview


In this device, the DC current gain is 60 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 10mA, 100mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).Maximum collector currents can be below 500mA volts.

KSA1156OSTU Features


the DC current gain for this device is 60 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at -7V
the current rating of this device is -500mA


KSA1156OSTU Applications


There are a lot of ON Semiconductor
KSA1156OSTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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