KSA1015GRTA-ON
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- Mfr.Part #
- KSA1015GRTA-ON
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 23,100
- In Stock ：
- 23,100
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- -
- Product Status :
- Active
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Operating Temperature :
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Package :
- Bulk
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package :
- TO-92-3
- Transistor Type :
- PNP
- Frequency - Transition :
- 80MHz
- Power - Max :
- 400 mW
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA, 6V
- Current - Collector (Ic) (Max) :
- 150 mA
- Datasheets
- KSA1015GRTA-ON
PNP 150°C (TJ) 100nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole
KSA1015GRTA-ON Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA, 6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.TO-92-3 is the supplier device package for this product.This device displays a 50 V maximum voltage - Collector Emitter Breakdown.
KSA1015GRTA-ON Features
the DC current gain for this device is 200 @ 2mA, 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of TO-92-3
KSA1015GRTA-ON Applications
There are a lot of onsemi
KSA1015GRTA-ON applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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