JAN2N4957

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

PNP

Surface Mount :

yes

Package / Case :

TO-72-3 Metal Can

JESD-30 Code :

R-CDSO-N3

Configuration :

Single

Gain :

25dB

Number of Terminations :

3

Terminal Finish :

Gold (Au) - with Nickel (Ni) barrier

Qualification Status :

Qualified

Reference Standard :

MIL-19500/426

Mounting Type :

Through Hole

Current - Collector (Ic) (Max) :

30mA

Operating Temperature :

-65°C~200°C TJ

JESD-609 Code :

e4

RoHS Status :

Non-RoHS Compliant

Radiation Hardening :

No

Terminal Position :

Dual

Lifecycle Status :

IN PRODUCTION (Last Updated: 6 months ago)

Power - Max :

200mW

Voltage - Collector Emitter Breakdown (Max) :

30V

Polarity/Channel Type :

PNP

Pin Count :

3

Number of Elements :

1

HTS Code :

8541.21.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 10V

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Collector-Base Capacitance-Max :

0.8pF

Transistor Element Material :

SILICON

Noise Figure (dB Typ @ f) :

3.5dB @ 450MHz

Transistor Application :

AMPLIFIER

Packaging :

Bulk

ECCN Code :

EAR99